[Editor's Note] With the rapid evolution of automotive power systems, gallium nitride (GaN) solutions are attracting attention as next-generation automotive power semiconductors, breaking away from the previous trend of utilizing silicon (Si) semiconductors in low-voltage and silicon carbide (SiC)-based semiconductors in high-voltage regions. GaN provides optimal efficiency in 200-500 V power systems and enables a wide range of power scaling from 50 W to 25 kW, enabling both power density and system miniaturization. Recently, GaN application has been expanding to low-voltage systems below 200 V, enabling optimal device selection according to design requirements. Meanwhile, Texas Instruments will be participating in the ' 2025 e4ds Tech Day ' event on September 9th to present on the topic of 'Implementing High-Power Density and Efficient Digital Power Systems with TI GaN FETs' regarding automotive GaN power semiconductors. We prepared an opportunity to learn about TI's GaN devices through an interview with TI Vice President Seungmok Kim, who was in charge of the presentation.


I'd like to know about the application areas of GaN, Si, and SiC solutions presented by TI. Specifically, I'm curious about why GaN is optimal for 200-500V systems and its scaling advantages from 50W to 25kW.


Si has a relatively low price and can be used in most industries based on low voltage.

SiC is widely used in inverters, chargers, and DC/DC converters that perform high-frequency switching at high rated voltages of 800 V or more.

In the case of GaN, due to process reasons, the system can be configured efficiently in a 200-500 V power supply system.

Because the switching frequency can be higher than that of SiC, high power density can be achieved in charger and DC/DC converter systems.

Recently, GaN is being actively applied even below 200 V, so it is possible to select the optimal GaN according to the power requirements of the system to be achieved, and configure a system with low cost and high efficiency.

■ I am curious about the design convenience and reliability that the gate drivers and protection functions integrated into TI GaN devices provide compared to existing discrete designs. Also, the change that designers feel the most is

By adopting an integrated solution, designers can reduce design time and minimize PCB area.

This has the advantage of making it easier to use GaN at higher frequencies by minimizing parasitic inductance components that may arise from integrated modules.

Additionally, overcurrent and short-circuit detection, which are not generally provided in existing discrete devices, enable more reliable abnormal phenomenon diagnosis and protection of GaN modules.

Additionally, it has a built-in regulator, which has the advantage of eliminating the need to separately implement a circuit to generate a negative power supply and an external 5V power supply.

■ I am curious about the common misunderstandings and challenges that system designers face when adopting GaN devices, and what technical support and materials (white papers, evaluation boards, etc.) TI provides to address these issues.

There is a misconception that GaN is still difficult to use at high voltages and increases system costs.

Although it is true that the maximum voltage is lower than that of SiC, in vehicles below 400 V, utilizing GaN can actually reduce cost and achieve higher power density.

The main challenge is to reduce manufacturing cost while increasing system power density by increasing switching frequency or utilizing bi-directional GaN.

TI provides various technical materials on its website and shares design data and test results of several reference boards, including OBCs and DC/DCs manufactured based on TI GaN, as open source.

■ Combination of integrated gate driver, power module, and isolation power source, etc., for future high-frequency, high-density power supply I wonder what differentiated competitive edge TI GaN will have in the system.

Electric vehicles are currently developing rapidly, and many vehicle manufacturers are demanding higher power density and reliability.

GaN is a power semiconductor that must be considered essential to support the vehicle performance expected by potential future electric vehicle users.

TI GaN can achieve higher power density while lowering manufacturing costs, and in particular, it can use power semiconductors more safely than SiC without additional cost by embedding various diagnostic functions that were not previously available in the industry.

In particular, in the single-stage OBC concept, which has recently become a hot topic, single-stage OBC implementation is possible based on a lower module count by utilizing bi-directional GaN, unlike SiC.

■ I am curious about what kind of content will be presented at the 2025 e4ds Tech Day.

We will explain the advantages of GaN over Si and SiC and explain in which fields it can be used.

We will explain what differentiates TI GaN from other companies due to its integrated module form factor and share what type of bias power supply topology should be utilized to properly utilize GaN.

Additionally, I will discuss the advantages of GaN devices in GaN-based automotive reference boards provided as open source by TI and in future modular-based OBCs and single-stage OBCs.

■ A word to readers regarding the 2025 e4ds Tech Day

Everyone prefers what is familiar and comfortable. On the other hand, if you don't make an effort to understand and apply new things, you will fall behind in competition with others.

So far, the automotive market has been centered on Si and SiC, but the market is rapidly changing, and if GaN is utilized appropriately, another innovation can be achieved.

We hope you will experience TI GaN-related information directly through the seminar at this year's 2025 e4ds Tech Day.

Meanwhile, TI will be participating in the ' 2025 e4ds Tech Day' to be held at the ST Center on September 9th and will present on the topic of 'Implementing High-Density and Efficient Digital Power Systems with TI GaN FETs'. Applications for the ' 2025 e4ds Tech Day ' can be made on the official website ( https://www.e4ds.com/conference/techday/ ).