The transition to sustainable transportation is no longer an option, but a necessity. As governments around the world implement stricter emission regulations and the adoption of electric vehicles (EVs) accelerates, innovation in charging infrastructure is emerging as a key challenge across industries.

In particular, relieving 'range anxiety' and achieving charging speeds comparable to those of internal combustion engine vehicles are identified as keys to expanding the EV market.

In this trend, Infineon Technologies is changing the paradigm of electric vehicle charging through a strategic approach centered on fast DC charging technology.

According to the recently published technical white papers, “EV Fast Charging Challenges and Technology Strategies,” “DC EV Charging System Design Guide,” and “Gate Driver IC Product Guide for EV Chargers,” Infineon presented a system that can charge 200 km of driving range in just 7 minutes through a charger architecture that combines high-efficiency semiconductor solutions and security technology.

Conventional home AC charging methods have long charging times and have limitations in fast charging due to limitations in the efficiency, cooling, and weight of the AC-DC converter in the vehicle. Accordingly, the industry is turning to high-speed DC charging infrastructure that supplies DC power directly from outside the vehicle.

Infineon has implemented technology that can charge 200 km in 16 minutes with a 150 kW DC charger and in just 7 minutes with a 350 kW charger.

This is similar to the refueling time of an internal combustion engine vehicle, providing real convenience to EV drivers.

The key to the fast charger is its modular design.

Infineon adopted a high-power architecture that combines subunits ranging from 15 to 60 kW. AC/DC conversion utilizes a Vienna rectifier and SiC-based PWM, while DC/DC conversion utilizes a resonant converter and ZVS technology to minimize losses.

In particular, Infineon's CoolSiC™ MOSFET modules support high operating temperatures and switching frequencies, maximizing power density and efficiency. They offer a wide range of RDS(on) options, from 52.9 mΩ to 1.44 mΩ, ensuring design flexibility. The EiceDRIVER™ isolated gate driver, with an output current of up to 18 A and delay matching of 7 ns, ensures stable control even in high-speed switching environments.

High-speed charging systems require more than just power supply; they also require communication and security features. Infineon handles charger control and communication with its XMC™ and AURIX™ MCUs, while its OPTIGA™ Trust B and TPM solutions enable hardware authentication and tamper prevention. This is essential not only for data protection at charging stations, but also for implementing V2G (Vehicle to Grid) and B2B models.


Meanwhile, Dabo Corporation is introducing Infineon's 11kW bidirectional DC/DC converter board (REF-DAB11KIZSICSYS) and providing participants with an opportunity to experience the actual technology.

The board boasts a peak efficiency of 97.2% and a power density of 4.1kW/l, and is considered an optimized solution for DC wallbox chargers and energy storage systems.

Featuring bidirectional power flow and soft switching characteristics, the board minimizes losses during charging and discharging, is easy to install, and offers the advantage of reducing cost per kW at the system level.

You can participate in the event at https://www.e4ds.com/event/dabo/ev-charging/ .