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Infineon and Rohm join forces to develop silicon carbide power semiconductor packages, marking a full-scale push into the global SiC market.

기사입력2025.09.26 09:04

ROHM Adopts Infineon's Top-Side Cooling Platform

Infineon Technologies (Korea CEO Seungsoo Lee) and ROHM are joining hands to launch a full-scale attack on the global silicon carbide (SiC) market.


Infineon announced on the 26th that it recently signed a memorandum of understanding (MOU) with Rohm for the development of silicon carbide (SiC)-based power semiconductor packages.

This collaboration aims to secure a second source of SiC power device packages for high-efficiency applications such as onboard chargers, solar power generation, energy storage systems (ESS), and AI data centers.

The two companies plan to increase customers' design and procurement flexibility and strengthen their competitiveness in the global market by developing interoperable packages.

In the future, customers will be able to obtain SiC devices in compatible housings from both Infineon and Rohm.

“We are pleased to collaborate with Rohm to accelerate the development of the SiC power switch market,” said Peter Wawer, President of Infineon’s Green Industrial Power business line. “This collaboration will provide our customers with a wider range of design options and sourcing flexibility, while also contributing to accelerating decarbonization by increasing energy efficiency.”

As part of this collaboration, ROHM will adopt Infineon's top-side cooling platform.

The platform is applicable to various packages including TOLT, D-DPAK, Q-DPAK, Q-DPAK Dual, and H-DPAK, and provides a standardized height of 2.3 mm for all packages.

This increases design convenience, reduces cooling system costs, and improves board space utilization, enabling up to twice the power density.

Additionally, Infineon plans to develop products compatible with the DOT-247 package used in Rohm's SiC half-bridge configurations.

ROHM's DOT-247 package reduces thermal resistance by approximately 15% and inductance by 50% compared to conventional TO-247, providing 2.3 times higher power density.

Its unique structure reduces assembly work and is optimized for implementing high-performance, high-efficiency power systems.

Infineon and Rohm plan to expand their collaboration to include a variety of packages in the future, providing customers with a wider range of solutions and sourcing options.